PART |
Description |
Maker |
IRG4BC29K IRG4BC30K IRG4BC30 |
600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
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IRF[International Rectifier]
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AT-31011 AT-31011-BLK AT-31011-TR1 AT-31033 AT-310 |
TERM BLOCK HDR 5.08MM 3POS PCB Low Current/ High Performance NPN Silicon Bipolar Transistor Low Current High Performance NPN Silicon Bipolar Transistor Low Current, High Performance NPN Silicon Bipolar Transistor
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HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
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KT234510 KT234505 |
Split-dual bipolar transistor module. 100A, 600V. Split-Dual Bipolar Power Module (100 Amperes/600 Volts)
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POWEREX[Powerex Power Semiconductors] Powerex Power Semicondu...
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MGW12N120 |
Insulated Gate Bipolar Transistor N-Channel Insulated Gate Bipolar Transistor 20 A, 1200 V, N-CHANNEL IGBT, TO-247AE
|
ONSEMI[ON Semiconductor]
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HGTP14N37G3VL HGT1S14N37G3VLS HGT1S14N37G3VLS9A |
TRANS IGBT CHIP N-CH 380V 25A 3TO-263AB 14A, 370V N-Channel, Logic Level, Voltage Clamping IGBTs TRANS PNP BIPOLAR 45V SOT323 TRANSISTOR | IGBT | N-CHAN | 380V V(BR)CES | 18A I(C) | TO-263AB TRANSISTOR PNP BIPOLAR 45V SOT23
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FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation
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STE07DE220 E07DE220 |
Hybrid emitter switched bipolar transistor ESBT 2200 V - 7 A - 0.07 Ohm power module Hybrid emitter switched bipolar transistor ESBT 2200V - 7A - 0.07з power module Hybrid emitter switched bipolar transistor ESBT 2200V - 7A - 0.07搂? power module Hybrid emitter switched bipolar transistor ESBT 2200V - 7A - 0.07 power module
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ST Microelectronics STMicroelectronics
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IRG4PH40U |
41 A, 1200 V, N-CHANNEL IGBT, TO-247AC INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A) 绝缘栅双极晶体管(VCES和\u003d 1200伏,的Vce(on)典\u003d 2.43V,@和VGE \u003d 15V的,集成电路\u003d 21A条) INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V Vce(on)typ.=2.43V @Vge=15V Ic=21A) 1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package
|
International Rectifier, Corp. IRF[International Rectifier]
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IRGB4059DPBF |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
|
IRF[International Rectifier]
|
MTD2006F |
Power ICs / Stepper Motor Drivers (MTD Series) Operation : Bipolar Dual full-bridge for a bipolar motor
|
Shindengen Electric Mfg.Co.Ltd
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MSA-2035 MSA-2011 |
Silicon Bipolar RFIC Amplifiers(硅双极型射频电路放大 (MSA-20xx) Cascadable Silicon Bipolar MMIC Amplifier
|
Agilent(Hewlett-Packard)
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IRG4PC30W IRG4PC30WPBF |
Insulated Gate Bipolar Transistors (IGBTs)(绝缘栅型双极型晶体管) 绝缘门双极晶体管(IGBTs)(绝缘栅型双极型晶体管 INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A) 600V Warp 60-150 kHz Discrete IGBT in a TO-247AC package
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International Rectifier, Corp. IRF[International Rectifier]
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